The son of Isaac Bersuker. Gennadi Bersuker completed his M.S. and Ph.D in Physics at the Leningrad State University and Chisināu State University, respec tively. After graduation, he joined Moldavian Academy of Sciences, and then worker at Leiden University and the University of Texas at Austin. Since 1994, he has bee working at SEMATECH on electrical characterization of Cu/low-k interconnec high-k gate stacks, advanced memory, and III-V logic devices. He is the Chair of IEE. Reliability Physics committee, an Editor of IEEE Transactions on Device Material and Reliability and has been involved in organizing, chairing, or serving as a commi tee member in a number of technical conferences, including IRW, IRPS, IEDM, AF etc. He isa SEMATECH Fellow and has published over 250 papers on theelectron properties of dielectrics and semiconductor processing and reliability. His scientific interest is Resistive random access memory ( R A M ) devices ut lizing a filamentary conduction mechanism have attracted significant attention due their unique scalability, low energy consumption and short characteristic switchi times. While R A M devices fabricated using a variety of dielectric materials exhil electrically similar switching features, the underlying mechanisms can be very mal rial-specific and might involve diffusion of oxygen or oxygen vacancies ormetal ion as well as material phase change.